“Designers of AI and HPC systems can implement platforms using HBM2E memory leveraging Samsung’s advanced 14/11nm process to achieve unmatched levels of performance.” The fully-integrated, ...
SAMSUNG 11nm Flip-Chip IO library with dynamically switchable 1.8V/3.3V GPIO with fail-safe capability, 5V I2C / SMBUS open-drain cell, 5V OTP cell, 1.8V & 3.3V analog cells, and associated ESD. A key ...