Electro-absorption modulator - Ansys Optics
An electro-absorption modulator (EAM) modulates the amplitude of light thanks to the change in the absorption coefficient of semiconductor material with an applied external electric field. As an electro-optic device, characterizing an electro-absorption modulator requires both electrical and optical simulations.
Electro-absorption modulator - Wikipedia
An electro-absorption modulator (EAM) is a semiconductor device which can be used for modulating the intensity of a laser beam via an electric voltage.
EAM Device Types • EAMs can be waveguide-based or surface normal • Waveguide-based structures typically allow for higher extinction ratios due to the increased absorption length • Surface normal devices provide the potential for large arrays of optical I/Os through bonding 5 Surface Normal EAM* [Helman JSTQE 2005] Waveguide EAM [Liu 2008]
Electroabsorption Modulators – electro-absorption modulator, …
An electroabsorption modulator (or electro-absorption modulator) is a semiconductor -based optical modulator. It can be used for controlling (modulating) the intensity (more precisely: the optical power) of a laser beam via an electric voltage (→ intensity modulators).
电吸收调制器(electroabsorption modulators)-光电百科(中英文版)
电吸收调制器 (electroabsorption modulators) 电吸收调制器是一种半导体器件，它通过施加电压来控制（调制）激光光束的强度（参阅光调制器）。. 它的工作原理为Franz-Keldysh效应，即施加的电场引起吸收光谱的改变，然后改变带隙能量（吸收边的光子能量），但是 ...
How to Design Better Electro-Absorption Modulators - Ansys
2021年3月31日 · Electro-absorption modulators (EAMs) are key building blocks for fiber optic transceivers that leverage the native support of quantum wells in III-V semiconductor devices.
Electro-Absorption Modulator - Synopsys
An EAM is a high-speed modulator design based on the Quantum Confined Stark Effect (QCSE). QCSE describes the effect that an externally applied electric field has upon the light absorption spectrum of a quantum well structure. In a QW, the absorption spectrum is very sharply peaked at a specific wavelength, known as the absorption edge.
High-speed Ge/Si electro-absorption optical modulator in C-band ...
We studied a high-speed electro-absorption optical modulator (EAM) of a Ge layer evanescently coupled with a Si waveguide (Si WG) of a lateral pn junction for high-bandwidth optical interconnect.
56 Gbps high-speed Ge electro-absorption modulator
A high-speed evanescent-coupled Ge waveguide electro-absorption modulator (EAM) with simple fabrication processes was realized on a silicon-on-insulator platform with a 220 nm top Si layer. Selectively grown Ge with a triangle shape was directly used for Ge waveguides of the EAM.
A 50 Gb/s PAM-4 EAM driver in 28-nm CMOS technology
2023年10月1日 · The proposed EAM driver consists of a continuous-time linear equalizer (CTLE), a variable gain amplifier (VGA), a preamp, and an output stage circuit. Linearity is enhanced by using inverter-based structures in the proposed CTLE, VGA, and preamp.