Surface chemical mechanisms of trimethyl aluminum in atomic …
By quantum chemical modeling, we have investigated the adsorption and decomposition of TMA on an AlN surface. We have found two competing decomposition pathways, either ligand exchange by protonation of the methyl groups in TMA by a surface amino group, or reductive elimination of the methyl groups as ethane.
Reactions of atomic nitrogen and trimethyl aluminum …
1990年1月1日 · The feasibility of aluminum nitride thin‐film deposition from chemical reactions of trimethyl aluminum (TMA) with active nitrogen downstream from a N 2 microwave plasma has been investigated. Chemiluminescence spectra of the downstream reaction showed the presence of CN and Al and the luminescence has been proposed to result from reactions ...
Nucleation and growth behavior of aluminum nitride film using thermal ...
2020年6月15日 · In this study, AlN films are grown on bare Si and TiN substrates at 295–342 °C by thermal ALD using trimethyl aluminum (TMA) and ammonia. Facile nucleation and linear growth on the TiN substrate, and substrate-inhibited nucleation on the Si substrate, are observed. NH 3 pretreatment may enhance the growth rate at the nucleation stage.
Area-Selective Low-Pressure Thermal Atomic Layer Deposition of …
2023年8月17日 · Aluminum nitride (AlN) was grown on porous silica by at. layer chem. vapor deposition (ALCVD) from trimethylaluminium (TMA) and ammonia precursors. The ALCVD growth is based on alternating, sepd., satg. reactions of the gaseous precursors with the solid substrate.
Atomic Layer Deposition of Aluminum Nitride Thin films from Trimethyl …
2004年9月1日 · Aluminum nitride (AlN) thin films were deposited from trimethyl aluminum (TMA) and Ammonia (NH3) by thermal atomic layer deposition (thermal ALD) and plasma enhanced atomic layer deposition (PEALD) on 200 mm silicon wafers. For both thermal ALD and PEALD, the deposition rate increased significantly with the deposition temperature.
Low Temperature Thermal Atomic Layer Deposition of Aluminum Nitride …
2020年7月31日 · Aluminum nitride (AlN) thin films were grown using thermal atomic layer deposition in the temperature range of 175–350 °C. The thin films were deposited using trimethyl aluminum (TMA) and hydrazine (N2H4) as a metal precursor and nitrogen source, respectively.
Atomic Layer Deposition of Aluminum Nitride Thin films from Trimethyl …
2004年1月1日 · Aluminum nitride (AlN) thin films were deposited from trimethyl aluminum (TMA) and Ammonia (NH3) by thermal atomic layer deposition (thermal ALD) and plasma enhanced atomic layer deposition...
Atomic Layer Deposition of Aluminum Nitride Using Tris(diethylamido ...
2018年4月3日 · Aluminum nitride (AlN x ) films were obtained by atomic layer deposition (ALD) using tris (diethylamido) aluminum (III) (TDEAA) and hydrazine (N 2 H 4) or ammonia (NH 3). The quartz crystal microbalance (QCM) data showed that the surface reactions of TDEAA and N2H4 (or NH 3) at temperatures from 150 to 225°C were self-limiting.
Surface chemical mechanisms of trimethyl aluminum in atomic …
2023年9月26日 · By quantum chemical modeling, we have investigated the adsorption and decomposition of TMA on an AlN surface. We have found two competing decomposition pathways, either ligand exchange by protonation of the methyl groups in TMA by a surface amino group, or reductive elimination of the methyl groups as ethane.
Atomic Layer Deposition of Aluminum Nitride Thin films from Trimethyl …
Aluminum nitride (AlN) thin films were deposited from trimethyl aluminum (TMA) and Ammonia (NH 3 ) by thermal atomic layer deposition (thermal ALD) and plasma enhanced atomic layer deposition (PEALD) on 200 mm silicon wafers. For both thermal ALD and PEALD, the deposition rate increased significantly with the deposition temperature.